Properties of cobalt-doped zinc oxide thin films grown by pulsed laser deposition on glass substrates
Identifieur interne : 000193 ( Main/Exploration ); précédent : 000192; suivant : 000194Properties of cobalt-doped zinc oxide thin films grown by pulsed laser deposition on glass substrates
Auteurs : Adel Taabouche [Algérie] ; Abderrahmane Bouabellou [Algérie] ; Fouad Kermiche [Algérie] ; Faouzi Hanini [Algérie] ; Yacine Bouachiba [Algérie] ; Azzeddine Grid [Algérie] ; Tahar Kerdjac [Algérie]Source :
- Materials science in semiconductor processing [ 1369-8001 ] ; 2014.
Descripteurs français
- Pascal (Inist)
- Addition cobalt, Dépôt laser pulsé, Polycristal, Laser excimère, Diffraction RX, Codopage, Grosseur grain, Granulométrie, Caractéristique optique, Propriété optique, Mode transversal, Mode TE, Guide onde, Indice réfraction, Mesure épaisseur, Appareillage, Epaisseur, Spectre absorption, Transparence, Bande interdite, Oxyde de cobalt, Oxyde de zinc, Couche mince, Verre, Couche mince piézoélectrique, Céramique, Matériau dopé, Réseau hexagonal, Structure wurtzite, Matériau transparent, Piézoélectrique, Fabrication microélectronique, 8115F, 8105K, 4255L, 6146, ZnO, 7867, 7840R, 7784, 8540H.
- Wicri :
English descriptors
- KwdEn :
- Absorption spectra, Ceramics, Cobalt additions, Cobalt oxide, Codoping, Doped materials, Energy gap, Excimer lasers, Glass, Grain size, Grain size analysis, Hexagonal lattices, Instrumentation, Microelectronic fabrication, Optical characteristic, Optical properties, Piezoelectric materials, Piezoelectric thin films, Polycrystals, Pulsed laser deposition, Refractive index, TE mode, Thickness, Thickness measurement, Thin films, Transparency, Transparent material, Transverse mode, Waveguides, Wurtzite structure, XRD, Zinc oxide.
Abstract
Undoped and cobalt-doped zinc oxide (CZO) polycrystalline piezoelectric thin films (Co: 3, 5 at.%) using a series of high quality ceramic targets have been deposited at 450 °C onto glass substrates using a pulsed laser deposition method. The used source was a KrF excimer laser (248 nm, 25 ns, 2J/cm2). X-ray diffraction patterns showed that the Co-doped ZnO films crystallize in a hexagonal wurtzite type structure with a strong (0 orientation, and the grain sizes calculated from these patterns decrease from 37 to 31 nm by increasing Co doping. The optical waveguiding properties of the films were characterized by using a prism-coupling method. The distinct M-lines of the guided transverse magnetic (TM) and transverse electric (TE) modes of the ZnO films waveguide have been observed. With the aim of study the optical properties of the ZnO films, an accurate refractive index and thickness measurement apparatus was set up, which is called M-lines device. An evaluation of experimental uncertainty and calculation of the precision of the refractive index and thickness were developed on ZnO films. The optical transmittance spectra showed a good transparency in the visible region. Calculated optical band gap varying from 3.23 to 3.37 eV when the content of Co doping increases from 0 to 5 at.%.
Affiliations:
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aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Constantine</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Welding and NDT Research Center (CSC), BP 64</s1><s2>Cheraga</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Cheraga</wicri:noRegion></affiliation></author><author><name sortKey="Bouabellou, Abderrahmane" sort="Bouabellou, Abderrahmane" uniqKey="Bouabellou A" first="Abderrahmane" last="Bouabellou">Abderrahmane Bouabellou</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Thin Films and Interfaces Laboratory, University of Constantine 1</s1><s2>Constantine</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Constantine</wicri:noRegion></affiliation></author><author><name sortKey="Kermiche, Fouad" sort="Kermiche, Fouad" uniqKey="Kermiche F" first="Fouad" last="Kermiche">Fouad Kermiche</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Thin Films and Interfaces Laboratory, University of Constantine 1</s1><s2>Constantine</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Constantine</wicri:noRegion></affiliation></author><author><name sortKey="Hanini, Faouzi" sort="Hanini, Faouzi" uniqKey="Hanini F" first="Faouzi" last="Hanini">Faouzi Hanini</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Thin Films and Interfaces Laboratory, University of Constantine 1</s1><s2>Constantine</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Constantine</wicri:noRegion></affiliation></author><author><name sortKey="Bouachiba, Yacine" sort="Bouachiba, Yacine" uniqKey="Bouachiba Y" first="Yacine" last="Bouachiba">Yacine Bouachiba</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Thin Films and Interfaces Laboratory, University of Constantine 1</s1><s2>Constantine</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Constantine</wicri:noRegion></affiliation></author><author><name sortKey="Grid, Azzeddine" sort="Grid, Azzeddine" uniqKey="Grid A" first="Azzeddine" last="Grid">Azzeddine Grid</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Welding and NDT Research Center (CSC), BP 64</s1><s2>Cheraga</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Cheraga</wicri:noRegion></affiliation></author><author><name sortKey="Kerdjac, Tahar" sort="Kerdjac, Tahar" uniqKey="Kerdjac T" first="Tahar" last="Kerdjac">Tahar Kerdjac</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Advanced Technology Development Center (CDTA)</s1><s2>Baba-Hassen, Algiers</s2><s3>DZA</s3><sZ>7 aut.</sZ></inist:fA14><country>Algérie</country><placeName><settlement type="city">Alger</settlement><region nuts="2">Wilaya d'Alger</region></placeName></affiliation></author></analytic><series><title level="j" type="main">Materials science in semiconductor processing</title><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><idno type="ISSN">1369-8001</idno><imprint><date when="2014">2014</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Materials science in semiconductor processing</title><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><idno type="ISSN">1369-8001</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Ceramics</term><term>Cobalt additions</term><term>Cobalt oxide</term><term>Codoping</term><term>Doped materials</term><term>Energy gap</term><term>Excimer lasers</term><term>Glass</term><term>Grain size</term><term>Grain size analysis</term><term>Hexagonal lattices</term><term>Instrumentation</term><term>Microelectronic fabrication</term><term>Optical characteristic</term><term>Optical properties</term><term>Piezoelectric materials</term><term>Piezoelectric thin films</term><term>Polycrystals</term><term>Pulsed laser deposition</term><term>Refractive index</term><term>TE mode</term><term>Thickness</term><term>Thickness measurement</term><term>Thin films</term><term>Transparency</term><term>Transparent material</term><term>Transverse mode</term><term>Waveguides</term><term>Wurtzite structure</term><term>XRD</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition cobalt</term><term>Dépôt laser pulsé</term><term>Polycristal</term><term>Laser excimère</term><term>Diffraction RX</term><term>Codopage</term><term>Grosseur grain</term><term>Granulométrie</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Mode transversal</term><term>Mode TE</term><term>Guide onde</term><term>Indice réfraction</term><term>Mesure épaisseur</term><term>Appareillage</term><term>Epaisseur</term><term>Spectre absorption</term><term>Transparence</term><term>Bande interdite</term><term>Oxyde de cobalt</term><term>Oxyde de zinc</term><term>Couche mince</term><term>Verre</term><term>Couche mince piézoélectrique</term><term>Céramique</term><term>Matériau dopé</term><term>Réseau hexagonal</term><term>Structure wurtzite</term><term>Matériau transparent</term><term>Piézoélectrique</term><term>Fabrication microélectronique</term><term>8115F</term><term>8105K</term><term>4255L</term><term>6146</term><term>ZnO</term><term>7867</term><term>7840R</term><term>7784</term><term>8540H</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Verre</term><term>Céramique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Undoped and cobalt-doped zinc oxide (CZO) polycrystalline piezoelectric thin films (Co: 3, 5 at.%) using a series of high quality ceramic targets have been deposited at 450 °C onto glass substrates using a pulsed laser deposition method. The used source was a KrF excimer laser (248 nm, 25 ns, 2J/cm<sup>2</sup>). X-ray diffraction patterns showed that the Co-doped ZnO films crystallize in a hexagonal wurtzite type structure with a strong (0 orientation, and the grain sizes calculated from these patterns decrease from 37 to 31 nm by increasing Co doping. The optical waveguiding properties of the films were characterized by using a prism-coupling method. The distinct M-lines of the guided transverse magnetic (TM) and transverse electric (TE) modes of the ZnO films waveguide have been observed. With the aim of study the optical properties of the ZnO films, an accurate refractive index and thickness measurement apparatus was set up, which is called M-lines device. An evaluation of experimental uncertainty and calculation of the precision of the refractive index and thickness were developed on ZnO films. The optical transmittance spectra showed a good transparency in the visible region. Calculated optical band gap varying from 3.23 to 3.37 eV when the content of Co doping increases from 0 to 5 at.%.</div></front></TEI><affiliations><list><country><li>Algérie</li></country><region><li>Wilaya d'Alger</li></region><settlement><li>Alger</li></settlement></list><tree><country name="Algérie"><noRegion><name sortKey="Taabouche, Adel" sort="Taabouche, Adel" uniqKey="Taabouche A" first="Adel" last="Taabouche">Adel Taabouche</name></noRegion><name sortKey="Bouabellou, Abderrahmane" sort="Bouabellou, Abderrahmane" uniqKey="Bouabellou A" first="Abderrahmane" last="Bouabellou">Abderrahmane Bouabellou</name><name sortKey="Bouachiba, Yacine" sort="Bouachiba, Yacine" uniqKey="Bouachiba Y" first="Yacine" last="Bouachiba">Yacine Bouachiba</name><name sortKey="Grid, Azzeddine" sort="Grid, Azzeddine" uniqKey="Grid A" first="Azzeddine" last="Grid">Azzeddine Grid</name><name sortKey="Hanini, Faouzi" sort="Hanini, Faouzi" uniqKey="Hanini F" first="Faouzi" last="Hanini">Faouzi Hanini</name><name sortKey="Kerdjac, Tahar" sort="Kerdjac, Tahar" uniqKey="Kerdjac T" first="Tahar" last="Kerdjac">Tahar Kerdjac</name><name sortKey="Kermiche, Fouad" sort="Kermiche, Fouad" uniqKey="Kermiche F" first="Fouad" last="Kermiche">Fouad Kermiche</name><name sortKey="Taabouche, Adel" sort="Taabouche, Adel" uniqKey="Taabouche A" first="Adel" last="Taabouche">Adel Taabouche</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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